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PEM-InGaAs

Technical Concept

InGaAs, short for InGaAs EMMI, are similar to traditional EMMI but longer wavelength range, between 900 and 1700 nm (infrared), and better sensitivity.

InGaAs, short for InGaAs EMMI, are similar to traditional EMMI but with different detectors made of Si for the former and InGaAs for the latter.

 

These differences shift the detection of InGaAs to a longer wavelength range, between 900 and 1700 nm (infrared).

 

With continuous decreasing operation voltage, the wavelength of emission photons caused by electron-hole combination has shifted to infrared range. Therefore, InGaAs are better at detecting hot spots in ICs operated at a lower voltage. In addition, the sensitivity of InGaAs is much better than that of traditional EMMI. This makes InGaAs an important FA tool for modern fault isolation.

 

 

 

Equipment

HAMAMATSU PHEMOS-1000

 

 

 

 

Applications

The application is similar to Si-CCD-based EMMI but InGaAs hold the following advantages.

  1. More powerful for IC inspection with a lower operation voltage
  2. High quantum yield in the IR range
  3. More powerful for backside inspection because of the higher IR transmission rate for Si substrate
  4. In-situ inspection of hot spots, is much more efficient than Si-CCD-based EMMI
 
 

 

 

Contact

Taiwan|SoC Lab

EMMI team

: +886-3-6116678 ext:3910/3911 

: +886-952-301-632

hc_efa@ma-tek.com

Taiwan|JB Lab

EMMI team

: +886-3-6116678 ext:1608/1609

: +886-987-058-875

jb_efa@ma-tek.com

 

Taiwan|Tainan Lab

Ms. Xu

: +886-3-6116678 ext:5212

: +886-979-509-675

epfa_tn@ma-tek.com

Shanghai Lab

EFA team

: +86-21-5079-3616 ext:7051

: 135-2431-3161

efa_sh@ma-tek.com

 

Xiamen Lab

Ms. Huang

: - - - - - - -

: 181-5013-6151

: efa_xm@ma-tek.com