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DB P-FIB

Technical Concept

Dual Beam Plasma FIB(P-FIB)uses Xenon as an ion source for cross-section sample preparation.

The operation time is 20 times faster than conventional Ga+ FIB. Hence, it is suitable for larger area cross-sectioning at specified target, which cannot be achieved with a standard FIB in a reasonable time.

 

Besides, electron gun is also installed in P-FIB to form SEM images. During cross-sectioning, defect profile can be inspected progressively and gradually in SEM mode such that analysts can decide the proper cutting location.

 

In addition to structure observation, P-FIB is often used for defect investigation after thermal emission microscopy and non-destructive analysis, like OM, 3D x-ray, or SAT. Now P-FIB is widely implemented in IC and package failure analysis.

 

 

 

Equipment

MA-tek owns both FEI and TESCAN P-FIB. The features are listed as below:

  • Beam current 1.5pA~1.3uA
  • Landing Voltage – 2KV ~ 30KV
  • Ion beam resolution at coincident point, <25nm @ 30 kV using preferred statistical method
  • High-throughput large-area automation
  • The cutting area can reach 500um wide and 500um deep
  • Extremely fast and precise cross sectioning and material removal

 

 (a) FEI P-FIB  (b) TESCAN P-FIB

 

 

 

 

Applications

P-FIB is mainly used in below products or structures:

  • 5D/3D ICs
  • TSV
  • C4 bump/interposer/u-bump
  • Bond PAD/1st Bond/2nd Bond
  • Solder bump/BGA ball
  • Chip backside
  • MEMS
  • Assembly/PCB

 


Bond pad and wire inspection


Solder bump inspection by channel contrast

 


Profile checking under BGA ball in CSP


TSV inspection

 

C4 bump cross-section

 

 

 

 

TESCAN P-FIB Special Features


EBIC can identify the fail location. Blue dots are particles or defects.

(a) EBIC  (b)SE


CL detector can distinguish the distribution and location of different materials.

(a) CL  (b)SE

 

 


BSE detector has stronger contrast between materials
 (a)SE  (b)BSE


LVSTD works at pressure of 1-500 Pa can be used to observe bio-samples (together with cooling stage)

 


Cooling stage:temperature can be stabilized at a range between -50 to -70 °C . With the cooling stage, we can observe the crystallization process.


SI detector can enhance the image contrast.
 (a) SE;(b)SI

 


The rocking stage can automatically rotate the sample stage to eliminate marks by FIB.
 (a) Polishing  (b) Rocking stage


 

 

 

 

Contact

Taiwan|SoC Lab

Mr. Chen

: +886-3-6116678 ext:3683

: +886-970-082-902

tem005_soc@ma-tek.com

Shanghai Lab

TEM team

: +886-3-6116678 ext:7108 / 7064

: - - - - - - - 

: tem_sh@ma-tek.com

 

Xiamen Lab

TEM team

: - - - - - - -

: 131-6288-5045

  189-6515-9702

tem_xm@ma-tek.com