Wafer Level / Chip Level

In the manufacturing process of optoelectronic and semiconductor devices, the material quality and structural design at the wafer and chip stages directly affect the performance, luminous efficiency, and product reliability of the components. Especially in LED, optoelectronic components, and advanced semiconductor processes, key factors such as epitaxial structure, multi-quantum wells (MQW), film thickness, and doping distribution must be precisely detected and evaluated through high-resolution analytical techniques. MA-tek provides complete wafer and chip level analysis services, using electron microscopy, material analysis, and elemental depth profiling techniques to deeply analyze the structure and material composition of the components. Through advanced analytical tools such as TEM, SEM, EDX, and SIMS, the structure of the LED epitaxial layer, crystal defects, and elemental distribution can be observed, assisting customers in evaluating material quality, clarifying process anomalies, and optimizing manufacturing processes. In the product development and process optimization stages, precise analysis at the wafer and chip levels can effectively enhance component quality and yield, providing a more reliable basis for process verification and quality control for optoelectronic and display technology products.

 

Analysis of LED chip structures and epitaxial layers

 

Through multi-scale analysis techniques such as X-ray, SEM, TEM, and HAADF, the epitaxial structures, multi-quantum wells (MQW), and crystal defects in LED chips can be observed, allowing for the assessment of device processing quality and material characteristics.

 

(a)X-ray image；(b)SEM image；(c)TEM image；(d)TEM image ；(e)TEM image；(f)HAADF image；(g)Optical Profile

 

Analysis of LED component structure and doping depth