CP Ion Grinding

Ion grinding systems typically useInductively coupled RF source or microwave sourceGenerate plasma during the operation of the system:

1. Argon (Ar) is introduced into the plasma chamber.

2. High-energy electrons collide with argon atoms to produce a large amount ofpositive argon ion (Ar⁺)。

3. The electrode system accelerates these argon ions to form a high-energy ion beam.

4. The ion beam bombards the sample surface, gradually removing the material.

Through precise controlIon energy, incident angle, and processing timecan prepare flat and undamaged cross-sections, and after grinding, use againOptical microscope (OM) or scanning electron microscope (SEM)Conduct observation and analysis.

 

Cross-section Milling

In order to observe and analyze the internal structure of the sample, it is necessary to fully reveal the internal structure of the sample. If only cutting and mechanical grinding are used, deformation or damage often occurs due to material stress, making it difficult for SEM to obtain ideal images.Ion Beam Bombardment Processingcan prepare cross-sections with low stress and high flatness, allowing SEM to clearly observe the internal structure of the sample.

• semiconductor multilayer metal structure

• dielectric layer thickness

• solder joint interface

• Material interface defects

• Foreign objects or contaminants

 

Flat Milling

In SEM surface observation and analysis, it is usually necessary toLarge area and flat sample surface,Flat milling uniformly removes the surface material of the sample through an ion beam, commonly used forSurface analysis or post-processing after mechanical grinding。

• Remove the damage layer caused by mechanical grinding.

• Flatten the sample surface

• Provide a larger observation area

• Improve SEM image quality

MA-tek has completeIntegration capabilities of ion milling and electron microscopic analysiscan provide high-quality sample preparation and precise material analysis.

• High-quality cross-section preparation capability:Can prepare low-stress, low-damage, and high-flatness sample cross-sections.
• Applicable to various material systems:Applicable to semiconductor, PCB, packaging materials, LED, and metal materials analysis.
• Large area sample processing capability:Can prepare large area observation regions, suitable for structural analysis and process diagnosis.
• Cross-technology integration analysis capabilities:can be combinedSEM, EDS, EBSD, FIB, TEMand analysis techniques, providing complete material analysis solutions.

FFC abnormal sample analysis

FFC (Flexible Flat Cable) abnormal samples are mechanically polished and then refined through ion milling to effectively avoid issues of material smearing and debris redeposition that occur during traditional polishing processes. After ion beam processing, the sample cross-section becomes flatter and the interfaces clearer, allowing for more accurate observation and interpretation of abnormal areas and material structures, which aids in subsequent defect localization and failure analysis.

Analysis of the cross-section of photosensitive devices (CCD / CMOS)

CCD and CMOS image sensors have multi-layer thin film structures and fine microstructures. Their material interfaces and circuit structures are relatively fragile. If only chemical mechanical polishing (CMP) is used for sample preparation, structural deformation or damage can easily occur due to mechanical stress. Through ion milling technology, precision processing of samples is performed using a high-energy argon ion beam, which can effectively reduce grinding stress and avoid material pulling, allowing multi-layer structures and critical dimensions to be completely preserved, thereby enhancing the accuracy of SEM observation and structural analysis.

LED sapphire substrate material analysis

Some LED components use sapphire wafers as substrate materials. Due to the high hardness and high mechanical strength of sapphire, if only chemical mechanical polishing (CMP) is used for sample preparation, it is easy to produce step height differences or uneven interfaces. Through ion milling technology, precision cross-section processing of samples is performed using high-energy argon ion beams, which can effectively improve the grinding rate differences between different materials, making the multilayer structure interfaces smoother and clearer, thereby enhancing the quality of SEM structural observation and material analysis.

Copper grain microstructure observation

After ion milling treatment, the sample can effectively remove the surface damage layer caused by mechanical grinding, allowing the internal microstructure of the material to be clearly presented. Under scanning electron microscope (SEM) observation, the grain structure and grain boundary distribution of the copper material can be clearly identified, which aids in material microstructure analysis and process quality assessment.

Ion milling cross-sectional images of one and two solder joint structures

The cross-sectional samples prepared by ion milling can clearly present the1st bond and 2nd bondStructure. By precisely controlling the ion beam energy and grinding angle, large area and flat cross-sections can be prepared without causing mechanical stress damage, allowing the interface structures of wire bonding, metal pads, and packaging materials to be clearly displayed, thereby facilitating the evaluation of solder joint quality and failure analysis.