CMOS image sensor

CMOS image sensors (CMOS Image Sensor, CIS) are one of the most important optical sensing components in modern electronic products, widely used in smartphones, automotive imaging systems (ADAS), surveillance equipment, medical imaging, industrial vision, and AI vision systems. As image resolution continues to improve and pixel sizes continue to shrink, the sensor structure is gradually developing towards backside illumination (BSI), stacked sensors, and multi-layer chip integration, significantly increasing the complexity of the manufacturing process and quality control challenges.

 

Common issues in the CMOS image sensor manufacturing process include dark current, hot pixels/dead pixels, metal contamination, thin film defects, microlens misalignment, and optical structure abnormalities. These defects can affect image quality, light sensitivity, and component reliability, thus requiring precise localization and failure mechanism analysis through high-resolution material analysis and structural inspection techniques.

 

MA-tek integrates material analysis (MA), surface analysis (SA), and failure analysis (FA) technology platforms to provide complete CMOS image sensor inspection and analysis solutions. Through optical microscopy (OM), scanning electron microscopy (SEM), focused ion beam (FIB), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and surface chemical analysis techniques, it is possible to deeply analyze pixel structures, metal interconnections, optical films, and material interface characteristics, assisting customers in quickly locating defect sources and improving process quality.

 

CMOS Image Sensor Testing and Analysis Solutions

 

Analysis of Pixel and Microlens Structure of Image Sensors