SRP impedance analyzer
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SRP measurement principle diagram
The semiconductor wafer is precision ground to form a bevel surface, allowing the P-N junction to be exposed along the surface direction. Two micro-probes contact the ground surface and apply a small voltage to measure the resistance between the probes, from which the resistivity and carrier concentration distribution of the material can be calculated. -

SSM 2000
The resistivity analyzer uses a high-precision probe system and measurement control software to perform point-by-point measurements on the ground surface, establishing the junction depth, resistivity, and effective carrier concentration distribution in semiconductor materials. -

SSM 2100
The resistivity analyzer utilizes high-precision probe systems and measurement control software to perform point-by-point measurements on the ground surface, establishing the junction depth, resistivity, and effective carrier concentration distribution in semiconductor materials.
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SRP sample grinding surface
The semiconductor sample is ground to form a bevel surface, allowing the component structure and material interface to unfold along the surface. By using a micro-probe of the spreading resistance analyzer to measure resistance values point by point along the ground surface, electrical information at different depths of the material can be obtained. -

SRP measurement result curve
The measured resistance signal can be converted into the material'sResistivity, Resistance, and Carrier Concentrationdistribution.
By analyzing the curve changes, the semiconductor material can be determined.Doping concentration distribution and Junction Depthused in ion implantation processes and process monitoring analysis.

SRP carrier concentration and resistivity depth distribution
This image isThe measurement results of Spreading Resistance Profiling (SRP) analysis.。
The horizontal axis represents material depth (Depth), and the vertical axis represents the electrical parameters obtained from measurements and calculations, including:
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Carrier Density
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Resistance
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Resistivity
It can be clearly identified in the image.P region, N-type epitaxial layer (N EPI) and P-type substrate (P Substrate)the structural differences, and can be judged by the changes in the curveP-N junction position and junction depth。
This analysis technique is commonly used for:
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semiconductorDoping concentration distribution analysis
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Junction Depth measurement
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Epitaxial layer (EPI) quality analysis
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Ion implantation and annealing process monitoring