C-AFM (Conductive Atomic Force Microscopy) is a high-resolution electrical analysis technique based on atomic force microscopy, which combines a conductive probe with a bias application mechanism to achieve simultaneous measurement of surface morphology and local current signals.

AFM nano-probe electrical measurement technology is based on atomic force microscopy (AFM) with high spatial resolution, combined with a multi-probe nano-electrical detection system, to directly perform electrical measurements and failure localization on a single transistor at the nanoscale, a non-destructive analysis technique.

SEM-based Nano-probing can be performed in a SEM vacuum environment using a low acceleration voltage (Low kV) electron beam combined with a nano probe, and has been successfully applied in the 5nm FinFET process node.

Thermal EMMI is a high-sensitivity failure analysis technique that locates defects by detecting the minute thermal radiation generated by components under powered conditions.

IR-OBIRCH is a non-destructive failure analysis technique that scans the surface (or back) of ICs using infrared laser, inducing localized heating to cause resistance changes, thereby detecting abnormal conduction or leakage locations.

EBAC electron beam-induced current technology is one of the important electrical localization tools in scanning electron microscopy (SEM) failure analysis, particularly suitable for analyzing conduction issues in metal interconnect structures.

EBIC (Electron Beam Induced Current) analysis technology is one of the important electrical localization methods in SEM failure analysis.

3D OM optical microscope utilizes principles such as optical interference, focal plane stacking, or white light interference to obtain three-dimensional height information (Z-axis) of samples in a non-destructive manner, while simultaneously presenting high-resolution 2D × 3D structural images.

Optical microscopy uses visible light to illuminate the surface of samples, quickly revealing the macroscopic morphology of components, materials, and structures through reflection, scattering, and optical contrast differences, providing important reference points for subsequent analysis.

3D X-ray (High Resolution 3D X-ray Microscope) obtains multi-angle images by rotating the sample and uses computer reconstruction to create a three-dimensional structure, allowing engineers to observe internal defects from different angles and even perform virtual slice analysis.

2D X-ray is a technique that uses X-rays generated by high-energy impacts on a metal target, which have penetrating properties, to observe and determine whether there are issues such as cold solder joints, HIP, or Hop inside advanced packaging without damaging the sample.

Scanning electron microscopy, also known as scanning electron microscope, is a high-resolution microscopic analysis technique that uses a high-energy electron beam to scan the surface of a sample and forms images based on signals generated from the interaction between electrons and the material.

Dual Beam Plasma FIB (DP-FIB) is a high-performance material processing and analysis equipment that combines plasma ion beam and scanning electron microscopy (SEM).

Electron Backscatter Diffraction (EBSD) is an important microscopic analysis technique that uses electron diffraction signals to analyze the crystal structure and grain orientation of materials.

Secondary Ion Mass Spectrometry (SIMS) is a highly sensitive material analysis technique widely used in semiconductor process analysis, materials research, elemental distribution measurement, and trace contamination analysis.

X-ray Photoelectron Spectroscopy (XPS) is a highly sensitive surface analysis technique used to measure the elemental composition and chemical bonding states of material surfaces.

X-ray fluorescence analysis (XRF) is a non-destructive elemental analysis technique.

Auger Electron Spectroscopy (AES) is a high-resolution surface elemental analysis technique that can be used to analyze the elemental composition and chemical states of extremely thin layers on material surfaces.

Fourier Transform Infrared Spectroscopy (FTIR) is a spectroscopic technique that utilizes the infrared light absorption characteristics for the analysis of organic components in materials.

Atomic Force Microscope (AFM) is a high-resolution scanning probe microscopy technique that can be used to measure the nanoscale morphology and structural features of material surfaces.

The film thickness profile measurement instrument (α-Step) is a precision device that uses a mechanical probe to scan and measure surface profiles. The system employs a diamond-tipped stylus to perform linear scanning on the sample surface.

The Surface Resistance Probe (SRP) is a commonly used electrical measurement technique in semiconductor material analysis, capable of measuring the depth distribution of junction depth, resistivity, and effective carrier concentration. It is widely applied in ion implantation and process monitoring analysis.

Scanning capacitance microscopy (SCM) is a semiconductor analysis technique based on scanning probe microscopy (SPM) that can be used to observe the two-dimensional doping distribution in materials and can clearly distinguish between N-type and P-type regions.

Mass spectrometry (MS) is a highly sensitive analytical technique widely used in materials analysis, semiconductor analysis, environmental monitoring, biomedical research, food testing, and chemical research.

Inductively Coupled Plasma Mass Spectrometry (ICP-MS) is a highly sensitive elemental analysis technique primarily used for determining trace elements and isotopic composition in samples.

LC-MS/MS is an analytical technique that combines liquid chromatography (LC) and mass spectrometry (MS) in tandem, integrating the high separation efficiency of liquid chromatography with the high sensitivity mass analysis capability of mass spectrometry.

Dry etching and delayering are methods that remove the metal layers and dielectric layers inside integrated circuits (IC) layer by layer through ion dry etching, chemical etching, or mechanical grinding.

Laser decapsulation is a non-contact process commonly used in failure analysis (FA) sample preparation techniques.

Chemical Decapsulation is a commonly used sample preparation technique in Failure Analysis (FA) of semiconductor devices.

Laser re-balling technology is a non-contact laser heating and single ball control method that can precisely complete solder ball bonding in a small area, significantly reducing thermal impact and mechanical stress, making it an important solution for advanced packaging and analysis applications.

In the process of semiconductor packaging and electronic product development, when a component malfunctions and needs to be replaced or further analyzed, Rework technology becomes an indispensable key process.

Wire Bonding is an important technology for establishing electrical connections between the die and external circuits or package pins.

Ion Milling, also known as Cross-Section Polishing (CP), is a sample preparation technique that uses a high-energy ion beam to bombard the surface of a sample, removing material and forming a smooth cross-section.

FIB uses gallium (Ga, atomic number 31) as an ion source, utilizing a negative electric field applied to the extractor to pull gallium atoms from the tip, forming a gallium ion beam. The beam is focused through an electric lens, and the size of the ion beam can be determined by a series of variable apertures, ultimately focusing the ion beam onto the surface of the sample.

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