PEM-InGaAs
InGaAs EMMI and traditional EMMI (Si CCD) both detect photons from electron-hole recombination and thermal carriers. However, due to different materials (InGaAs vs. Si), their detection wavelength ranges differ. InGaAs can detect longer wavelengths, approximately between 900nm to 1700nm, which falls within the infrared range. As device fabrication shrinks, operating voltages decrease, leading to lower energy from thermal carriers, which in turn results in longer wavelengths of light emitted by thermal carriers, entering the infrared range. Therefore, InGaAs is very suitable for advanced process applications that require precise detection of bright spots. Additionally, InGaAs offers higher sensitivity compared to CCD EMMI, making it an excellent choice for achieving better bright spot detection capabilities.
Similar to the application of CCD EMMI, but with the following advantages over CCD EMMI:
- Provides faster hotspot localization for low voltage operation IC testing (the wavelength generated by leakage current is longer).
- High sensitivity of infrared detection (high quantum efficiency)
- For the positioning analysis of the IC backside, the infrared light has a higher transmittance through the silicon substrate.
- During the bright spot detection period (integration period), the presentation of the bright spots is real-time, rather than requiring integration to present bright spots as in CCD EMMI.
