chip internal defect location
The internal defect localization of chips is a key step in semiconductor failure analysis, aimed at accurately identifying the true location of abnormalities within the chip without damaging or minimally damaging the sample. With the development of advanced process nodes and highly integrated IC architectures, defects are often hidden in multi-layer metals, complex interconnections, or active component areas. It is difficult to determine the source of failure through appearance or single measurements alone, so a systematic defect localization process must be implemented to gradually narrow down the scope and establish a clear direction for subsequent structural and material analysis.
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The chip has functional abnormalities but appears normal.
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Electrical measurements show short circuit (Short) or leakage (Leakage)
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Local area overheating or electrical instability
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ESD / EOS damage leads to internal structural abnormalities
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Advanced processes or highly integrated chips cannot determine failure locations using traditional methods.
