chip internal defect location
The internal defect localization of chips is a key step in semiconductor failure analysis, aimed at accurately identifying the true location of abnormalities within the chip with minimal or no damage to the sample. With the development of advanced process nodes and highly integrated IC architectures, defects are often hidden within multilayer metals, complex interconnections, or active component areas. It has become difficult to determine the source of failure through appearance or single measurements alone. Therefore, a systematic defect localization process must be implemented to gradually narrow down the scope and establish a clear direction for subsequent structural and material analysis.
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Chip function abnormal but appearance normal
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Electrical measurements show short circuit (Short) or leakage (Leakage)
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Local area overheating or electrical instability
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ESD / EOS damage leads to internal structural abnormalities
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Advanced processes or highly integrated chips cannot determine failure locations using traditional methods.
