TEM transmission electron microscope
TEM uses a high-energy electron beam to penetrate ultra-thin samples, forming three-dimensional angular scattering images, allowing observation of crystal structures and atomic arrangements, and is an important tool for semiconductor and materials analysis.
Frequently Asked Questions
Q1. How wide, deep, and thin can a TEM X-S sample generally be cut?
A. The width of the thin area of a general case TEM sample is 5~10um, depth within 20um, and thickness about 80~100nm.
Q2. The elemental ratio measured by TEM/EDX differs from expectations, for example, the Ga : As ratio in LED products should theoretically be 50% : 50%...
A. EDX is usually a qualitative and semi-quantitative analysis, which can observe an overall trend. If necessary, the thickness of the sample can also be taken into account to make adjustments for a closer ratio value.
Q3. What is the spot size of TEM/EDX? What is the detection limit?
A. The spot size of TEM/EDX is approximately 2nm; elements with a concentration of more than 5% can be detected.
Q4. What is the typical size range for TEM P-V samples?
A. If the sample is left with a general thickness (100nm), it can cut a range of 10x10um; if the sample is left with a thicker thickness (about 800~900nm), it can cut a range of 25x12um.
Q5. What is the minimum selectable range for selected area diffraction (SAD) analysis of lattice orientation in TEM?
A. The minimum selection range for SAD is 200nm, so when the thickness of the film to be measured or the grain size is greater than 200nm, SAD analysis can be used; if it is less than 200nm, NBD should be used, with an NBD beam size of approximately 3~5nm.
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Taiwan Laboratory | Silicon Conductor
