Junction & Doping Profile Analysis
The PN junction depth and doping concentration distribution directly affect the conversion efficiency and electrical performance of solar cells. Process conditions can be optimized through deep analysis techniques.
Analysis items
- Junction depth measurement
- Doping concentration profile analysis
- Diffusion layer depth measurement
- Ultra-shallow junction analysis
- Doping uniformity assessment
SIMS Applications
- Ultra-shallow junction analysis
- extremely thin layers (around 10 Å) analysis
- Doping profile/Depth profile
- back copper diffusion
- Contamination verification
- Excellent detection limits (ppm to ppb)
- can detect all elements and isotopes, including hydrogen
- Excellent depth resolution, potentially reaching 1 nm
- Standard reference quantification
- Insulators can be measured.
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(a) ultra-shallow junction -
(b) High depth resolution
SIMS analysis of silicon solar cells
