SEM-based Nano-probing

SEM-based Nano-probing is to combineScanning Electron Microscope (SEM)Integrating with a nano-scale mechanical probing system in the same vacuum environment allows engineers to perform electrical measurements and defect localization of individual transistors synchronously under high-resolution imaging conditions.

Figure | Comparison of electrical differences of 7nm devices under different acceleration voltages

When performing electrical measurements in a SEM environment, the electron beam itself may cause charge accumulation on the sample surface and drift in channel characteristics, thereby affecting measurement interpretation. nProber IV supports a minimum operating acceleration voltage of 100eV, which can effectively reduce the interference of the electron beam on the device, making the I-V curve closer to the original characteristics of the device.

Diagram | Component Temperature Variation Electrical Measurement Process Schematic

The reliability verification of advanced chips is not limited to room temperature operation; temperature has a significant impact on leakage, contact resistance, and channel behavior. SEM-based Nano-probing integrates a temperature-controlled stage, allowing electrical measurements to be conducted under environmental conditions ranging from -40°C to 150°C, assisting engineers in evaluating the stability of components under high temperature, high power, and low temperature extreme conditions.

On the SEM platform, in addition to basic electrical measurements, electron beam induced analysis can also be performed. When the electron beam strikes the sample, electron-hole pairs are generated, which can form measurable current signals, thereby locating defects such as gate oxide breakdown, junction leakage, or metal open and short circuits. By cross-referencing EBIC, EBAC, and EBIRCH techniques, different types of failures can be distinguished, enhancing the accuracy of interpretation.

Figure | High-speed Pulsed I-V Transient Waveform Comparison (Reference vs Fail)

At the nanoscale, the effects of resistance and capacitance significantly impact the switching behavior of transistors. nProber IV features 750ps high-speed pulsed I-V capabilities, allowing it to capture the transient waveforms of transistors at the moment of switching, analyze the rise and fall delay times, and compare the differences between normal and failed products, which is crucial for diagnosing RC delay, gate oxide leakage, and contact anomalies.

Figure | High-speed Pulsed I-V Transient Waveform Comparison (Reference vs Fail)

At the nanoscale, the effects of resistance and capacitance significantly influence the switching behavior of transistors. nProber IV features 750ps high-speed pulsed I-V capabilities, allowing it to capture the transient waveforms of transistors at the moment of switching, analyze rise and fall delay times, and compare the differences between normal and failed products, which is of critical value for diagnosing RC delay, gate oxide leakage, and contact anomalies.

In advanced processes below 5nm, a single technology can no longer fully determine the root cause of failure.MA-tekWith "cross-technology integration" as the core advantage, SEM-based Nano-probing is incorporated into the complete failure analysis process, rather than being a point measurement.

Image | nProber IV Fourth Generation SEM-based NanoProber System

MA-tekIntegrating SEM-based Nano-probing into the complete failure analysis process, rather than as a standalone measurement technique. Once the nano probe locates a suspicious area, it can seamlessly connect with AFM-based Nano-probing, C-AFM, OBIRCH, Thermal EMMI, FIB precise sample preparation, and TEM structural verification, forming an integrated platform for Electrical FA and Physical FA.

 

At nodes of 5nm and below, a single technology has become insufficient to solve complex failure issues. Through cross-technology validation and professional interpretation experience, MA-tek can effectively shorten positioning time, improve the success rate of root cause determination, and reduce rework and misjudgment risks.

 

The nProber IV fourth-generation SEM-based NanoProber system integrates high-resolution SEM and nano-probing measurement platforms, allowing for single transistor electrical measurements and precise failure localization in a vacuum environment, making it a core device for advanced process nano-electrical analysis.