P-FIB dual beam plasma ion beam
P-FIB utilizes xenon ions (Xe+) as its ion source, achieving etching rates 20 times faster than traditional Ga+ FIB, making it suitable for large-scale structures and quick observation of cross-sections, which is something traditional Ga+ FIB cannot achieve. Additionally, P-FIB is equipped with an electron gun, allowing for simultaneous SEM observation during the cutting process, enabling real-time assessment of defect changes.
In addition to basic structural observation, the application of P-FIB can also be used for analysis and detection after hotspot or non-destructive analysis, such as confirming anomalies observed through Thermal Emission Microscopy, OM, 3D x-ray, or SAT, by utilizing P-FIB for cross-sectional confirmation at the anomaly site, leading to its increasing use in failure analysis of packaging and chips.
