SCM scanning capacitance microscope

Scanning Capacitance Microscopy,SCM) is a technology based on Scanning Probe Microscope (SPM)semiconductor analysis technology, that can be used to observe the 2D Doping Distributionand can clearly distinguishN-type and P-type regions。

During the measurement process, an alternating current voltage (AC bias) is applied between the metal-coated probe and the sample to measure the capacitance change signal.dC/dVand convert the signal into the doping distribution image of the material. Through this method, the semiconductor structure can be obtained.P-N junction position and doping distribution.Since SCM is based on the structure of scanning probe microscopy, itsThe planar resolution can reach approximately 100 nm or more.suitable for analyzing the structure of semiconductor devices at the nanoscale.

Compared to other analytical techniques, SCM can provideHigh-resolution two-dimensional doping images, and therefore in Process analysis, failure analysis, and reverse engineeringhas important value.

• SIMS and SRPCan only provide one-dimensional doping depth distribution.

• SEM combined with chemical etching stainingIt is more difficult to precisely control the etching conditions.

 

Scanning Capacitance MicroscopeMainly used for the observation and analysis of two-dimensional carrier concentration images.

The scanning capacitance microscope is built on the structure of a scanning probe microscope, allowing for a planar resolution of over 100 nanometers. During analysis, an AC voltage is applied to the metal-coated probe, measuring the dC/dV signal which is converted into a two-dimensional doping distribution, enabling the distinction between N-type and P-type regions and their interfaces.