SEM scanning electron microscope
Electron microscopes are the fastest and most effective method for observing fine surface structures. MA-tek has a series of ultra-high resolution field emission scanning electron microscopes (FE-SEM), including multiple Hitachi S-8020 and S-4800 models, which can be paired with precise sample preparation techniques, such as CP (ion milling) or skilled delayer methods, to perform micro-area magnification observations and component size measurements on sample surfaces and cross-sections, with magnification up to several hundred thousand times. Additionally, the installed Energy Dispersive Spectrometry of X-ray (EDS) can perform qualitative and semi-quantitative analysis of micro-area materials, providing significant assistance in analyzing material composition or foreign substance components.
- Provide surface and cross-sectional microstructure observation and analysis for all types of samples.
- Provide precise film thickness measurement and labeling for multilayer structure samples.
- Using EDS X-ray spectral line analysis for qualitative and semi-quantitative analysis of materials or compositional distribution analysis of specific areas such as points, lines, and surfaces.
- By using low acceleration voltage electron beam scanning for Passive Voltage Contrast (PVC), it can detect leakage or high resistance locations, providing judgment for anomaly analysis.
- Samples are processed using delayering technology to provide images generated by SEM for automatic circuit stitching, which can be longitudinally linked with images generated by optical microscopes, providing a reference for circuit restoration and reverse engineering.
- Cooperating with the Emission Microscope (EMMI) or Optical Beam Induced Resistance Change (OBIRCH) for debugging, locating the position of faulty abnormal structures, and using various micro-cutting techniques for precise analysis to identify the cause of the failure.
(b) Cross-sectional SEM observation of dynamic random access memory at the character line junction.
(C) Cross-sectional SEM observation of dynamic random access memory at the character line junction.
(d) Planar SEM top view observation. Damage location of the component after anti-static testing.
(e) Integrated Circuit Reverse Engineering
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(a) S-4800
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(b) S-8020
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SU-8220
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SU-8220
