[New Machine Launch] MA-tek Tainan Factory Capacity Expansion
In response to the rapid evolution of nanometer-level process technology and highly complex IC design, traditional failure analysis methods have become inadequate to comprehensively address the challenges of today's industry. To strengthen technical service capabilities, MA-tek's Tainan plant has officially introducedlatest PHEMOS-X failure analysis systemto further upgrade production capacity and analysis capabilities.
PHEMOS-X is an advanced infrared and static current imaging analysis integrated system in the industry, combiningInGaAs (infrared imaging) and OBIRCH (static current imaging)Two key technologies can perform high-sensitivity problem localization for various complex components, especially suitable for the analysis needs of advanced process ICs, automotive electronics, high-voltage power components, and ESD-related components.
Dual technology integration, fully grasping the root cause of failures.
InGaAs infrared imaging analysis
- High-sensitivity infrared imaging technology can quickly locate weak light spots on the back of low-voltage ICs.
- Support up to 1KV high voltage operation, effectively analyzing complex failure modes such as P-N junction leakage, latch-up effects, and polysilicon residue.
OBIRCH static current imaging analysis
- Applied to detect metal line and contact anomalies, such as voids, silicon lumps, and poor contacts.
- Can effectively address static current anomalies such as bridging, ESD, and component burn-out, improving analysis accuracy.
Scope of application
- Advanced IC
- Automotive Electronics
- Power management and high voltage components
- ESD/component burn-out failure analysis
Contact Us
✉️：epfa_tn@ma-tek.com
📞：0979-509-675
