[New Machine Online] MA-tek Tainan Factory Capacity Expansion
In response to the rapid evolution of nano-level process technology and highly complex IC design, traditional failure analysis methods have struggled to comprehensively address the challenges of today's industry. To enhance technical service capabilities, MA-tek's Tainan plant has officially introducedlatest PHEMOS-X failure analysis systemto further upgrade production capacity and analytical capabilities.
PHEMOS-X is an advanced infrared and static current imaging analysis integrated system in the industry, combiningInGaAs (infrared imaging)與OBIRCH (Static Current Imaging)Two key technologies can perform high-sensitivity problem localization for various complex components, particularly suitable for the analysis needs of advanced process ICs, automotive electronics, high-voltage power components, and ESD-related components.
Integration of dual technologies for comprehensive control of root cause analysis.
InGaAs infrared imaging analysis
- High-sensitivity infrared imaging technology can quickly locate weak light spots on the back of low-voltage ICs.
- Support up to 1KV high voltage operation, effectively analyzing complex failure modes such as P-N junction leakage, latch-up effects, and polysilicon residue.
OBIRCH static current imaging analysis
- Applied to detect metal line and contact anomalies, such as voids, silicon lumps, and poor contacts.
- Effectively address static current anomalies such as bridging, ESD, and component burn-out, improving analysis accuracy.
Scope of Application
- Advanced IC
- 車用電子元件（Automotive Electronics）
- Power management and high voltage components
- ESD/component burn-out failure analysis
Contact Us
✉️：epfa_tn@ma-tek.com
📞：0979-509-675
