Advanced Transistor Technology and Development Trends
With the miniaturization of traditional semiconductor sizes, the gate length of transistors is also gradually decreasing. To evaluate semiconductor wafer fabrication technology, the gate width of transistors is traditionally used as an indicator, because a smaller gate width means a smaller transistor, allowing more transistors to fit on the same size wafer, which in turn implies more functions and better performance.
Research on the characteristics of N-type β-Ga2O3 polycrystalline films grown on sapphire substrates by ion implantation and their device properties.
In recent years, the rapid development of electric vehicles and renewable energy has led to an increasing demand and performance requirements for power devices. Silicon (Si) has a bandgap (Eg) of only 1.12 eV, which cannot withstand high voltages. Currently, high-voltage and high-power power devices are gradually adopting third-generation wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). Devices made from these materials can significantly enhance the voltage and power of power devices, thereby improving applications in electric vehicles and renewable energy.
Let's explore the world of planes---Introduction to two-dimensional materials
Two-dimensional material systems have many excellent properties that have been reported. The 2D semiconductor hardware system that integrates sensing, storage, and processing will disrupt the architecture of electronic applications in the future. At this stage, there is still much research work to be done to develop integrated circuit mass production and even commercial applications.
