Development of Scanning Electron Microscopy Analysis Technology - Taking the Analysis of Epitaxial Defects in Wide Bandgap Semiconductors as an Example
This article mainly focuses on several wide bandgap semiconductors with a hexagonal structure, such as Gallium Nitride (GaN, Eg=3.4 eV), Aluminum Nitride (AlN, Eg=6.2 eV), Zinc Oxide (ZnO, Eg=3.3 eV), and Silicon Carbide (4H-SiC/6H-SiC, Eg=2.8-3.2 eV). These wide bandgap semiconductors, especially Gallium Nitride, Aluminum Nitride, and Zinc Oxide, have been widely used in surface acoustic wave devices, ultraviolet and blue light detectors, light-emitting diodes, and laser diodes.
Secondary Ion Mass Spectrometry (SIMS) in the Analytical Applications of Quality Monitoring in Integrated Circuit Processes
Top semiconductor application chips not only require excellent IC circuit design, but also need perfect nano-device structures combined with next-generation or advanced semiconductor process technologies to achieve the best performance of the chips.
Advanced Transistor Technology and Development Trends
With the miniaturization of traditional semiconductor sizes, the gate length of transistors is also gradually decreasing. To evaluate semiconductor wafer fabrication technology, the gate width of transistors is traditionally used as an indicator, because a smaller gate width means a smaller transistor, allowing more transistors to fit on the same size wafer, which in turn implies more functions and better performance.
Research on the characteristics of N-type β-Ga2O3 polycrystalline films grown on sapphire substrates by ion implantation and their device properties.
In recent years, the rapid development of electric vehicles and renewable energy has led to an increasing demand and performance requirements for power devices. Silicon (Si) has a bandgap (Eg) of only 1.12 eV, which cannot withstand high voltages. Currently, high-voltage and high-power power devices are gradually adopting third-generation wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). Devices made from these materials can significantly enhance the voltage and power of power devices, thereby improving applications in electric vehicles and renewable energy.
