Quick Understanding of the Highlights of the 2025 Edition AQG 324 Specifications
AQG 324 is a testing guideline for automotive power modules led by ECPE (European Center for Power Electronics).
MA-tek establishes a service model for verifying the integrity of power components.
The high voltage and high frequency characteristics of power devices (SiC, GaN) related to power supply play a crucial role in electric vehicles. Due to the critical role of power devices in electric vehicles, many companies are seizing this trend and are actively investing in the research and development of power devices.
Innovative Breakthroughs in Copper Hybrid Bonding Technology: Key Technologies for 3D Integrated Circuits and Advanced Packaging
The development of 3D IC technology is like stacking "LEGO blocks," vertically integrating chips with different functions, which not only saves space but also significantly enhances overall system performance, bringing new possibilities for breaking the Moore's Law! However, to ensure that these "blocks" of chips can align precisely, communicate stably, dissipate heat effectively, and avoid short circuits or aging, the key lies in "how to connect them."
Silicon photonics technology promotes advanced high-performance computing
Faced with the massive computing demands of AI and HPC systems, how silicon photonics technology can enhance data transmission rates and reduce power consumption between data centers and chips through optical interconnect technology, providing a key pathway for the next generation of high-performance computing architectures.
Next-generation energy storage technology: advanced lithium-sulfur batteries
Lithium-sulfur battery (Li-S Battery) is regarded as an important breakthrough in next-generation battery technology. As lithium-ion batteries gradually approach their technical limits, lithium-sulfur batteries, with advantages such as "high energy density, low cost, and environmentally friendly lightweight," demonstrate strong application potential in fields such as electric vehicles, aerospace, drones, and smart grids that require large-scale energy storage. They are rapidly becoming a global research and development focus!
The new battlefield of two-dimensional semiconductors: bismuth selenide transistors
As the miniaturization of silicon-based transistors approaches physical limits, two-dimensional semiconductor materials such as bismuth selenide are becoming new candidates for transistors in the post-silicon era due to their high carrier mobility, advantages of native oxide layers, and potential for large-area growth.
Breaking the Limits of Moore's Law: Key Applications of Advanced Packaging Technology and Heterogeneous Integration Analysis
Moore's Law predicts that the number of transistors on an integrated circuit will double every 18 months for the same area, and the performance of chips will continue to improve. After nearly 60 years of guiding the development of the semiconductor industry, this law is gradually approaching its limits. Major manufacturers are also thinking of new solutions, hoping to continue improving the overall performance of chips without being able to shrink transistors, and to achieve performance breakthroughs by stacking semiconductor circuits layer by layer through system integration.
The most important memory embedded in AI chips - Static Random Access Memory (SRAM) advanced process structure inspection and analysis.
In such complex IC circuits, the heaviest embedded memory in AI chips is SRAM (Static Random-Access Memory). This type of embedded SRAM is also known as embedded SRAM.
The role of crystal structure in semiconductors and the application of X-ray diffraction analysis.
With the advancement of technology and the development of advanced processes, electronic products are becoming smaller and smaller, and the size of semiconductor components is approaching the physical limits of materials. In order to meet the demands of next-generation electronic products, such as small size, multifunctionality, fast instruction cycles, and low power consumption, while avoiding the physical limits of component size, surpassing Moore's Law has become the current research goal of the semiconductor industry.
Development of Scanning Electron Microscopy Analysis Technology - Taking the Analysis of Epitaxial Defects in Wide Bandgap Semiconductors as an Example
This article mainly focuses on several wide bandgap semiconductors with a hexagonal structure, such as Gallium Nitride (GaN, Eg=3.4 eV), Aluminum Nitride (AlN, Eg=6.2 eV), Zinc Oxide (ZnO, Eg=3.3 eV), and Silicon Carbide (4H-SiC/6H-SiC, Eg=2.8-3.2 eV). These wide bandgap semiconductors, especially Gallium Nitride, Aluminum Nitride, and Zinc Oxide, have been widely used in surface acoustic wave devices, ultraviolet and blue light detectors, light-emitting diodes, and laser diodes.
